Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors

We have investigated the low-frequency noise (LFN) properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) as a function of frequency, bias, and channel length of devices. The measured noise power spectral density of drain current (<i>S</i> <sub>iD</sub>) shows that the low-frequency noise in a-IGZO TFTs obeys the classical 1/<i>f</i> noise theory, i.e., it fits well to a 1/<i>f</i> <sup>gamma</sup> power law with gamma ~ 1 in the frequency range of 10 Hz to 1 kHz. From the dependence of normalized noise power spectral density (<i>S</i> <sub>iD</sub>/<i>ID</i> <sup>2</sup>) on the gate voltage, mobility fluctuation is considered as a dominant LFN mechanism in a-IGZO TFTs. The magnitude of <i>S</i> <sub>iD</sub>/<i>ID</i> <sup>2</sup> is inversely proportional to the channel length of devices, which indicates that contact noise is insignificant in a-IGZO TFTs.

[1]  Masatoshi Kitamura,et al.  High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes , 2008 .

[2]  T. Ducourant,et al.  CONDUCTION AND 1/F NOISE ANALYSIS IN AMORPHOUS SILICON THIN-FILM TRANSISTORS , 1996 .

[3]  M. Valenza,et al.  Low frequency noise in thin film transistors , 2002 .

[4]  Sung-Min Yoon,et al.  Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor , 2009 .

[5]  L.K.J. Vandamme,et al.  1/f noise in MOS devices, mobility or number fluctuations? , 1994 .

[6]  Lode K. J. Vandamme,et al.  Noise as a diagnostic tool for quality and reliability of electronic devices , 1994 .

[7]  E. Simoen,et al.  Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks , 2006, IEEE Electron Device Letters.

[8]  M. Valenza,et al.  1/f noise investigations in small channel length amorphous silicon thin film transistors , 1998 .

[9]  Eunha Lee,et al.  Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory , 2008, IEEE Electron Device Letters.

[10]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[11]  L.K.J. Vandamme,et al.  What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs? , 2008, IEEE Transactions on Electron Devices.

[12]  M. Deen,et al.  Low-frequency noise in cadmium-selenide thin-film transistors , 2000 .

[13]  A. Mercha,et al.  Current crowding and 1/f noise in polycrystalline silicon thin film transistors , 2001 .

[14]  Yeon-Gon Mo,et al.  High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel , 2007 .

[15]  L.K.J. Vandamme,et al.  1/f noise in pentacene and poly-thienylene vinylene thin film transistors , 2002 .

[16]  H. Hosono,et al.  Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor , 2007, IEEE Electron Device Letters.