Degradation of ion implanted GaAs MESFETs
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D. V. Morgan | J. M. Dumas | H. Thomas | R. Conlon | J. Goostray | G. M. Gauneau | D. Morgan | H. Thomas | J. Dumas | R. Conlon | J. Goostray | G. Gauneau
[1] C. S. Wu,et al. WSix refractory metallization for GaAs metal–semiconductor field‐effect transistors , 1988 .
[2] Aristos Christou. Reliability problems in state‐of‐the‐art GaAs devices and circuits , 1989 .
[3] P. Blood,et al. Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers , 1986 .
[4] J. D. Wiley,et al. C-V profiling of GaAs FET films , 1978, IEEE Transactions on Electron Devices.
[5] M. Adlerstein. Electrical traps in GaAs microwave f.e.t.s , 1976 .
[6] D. Lang. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .
[7] M. Simons,et al. Long-Term Radiation Transients in GaAs FETs , 1979, IEEE Transactions on Nuclear Science.
[8] A. Mircea,et al. Electron traps in bulk and epitaxial GaAs crystals , 1977 .
[9] H. Fukui,et al. Reliability of power GaAs field-effect transistors , 1979, 1979 International Electron Devices Meeting.
[10] Alessandro Paccagnella,et al. Metal–GaAs interaction and contact degradation in microwave MESFETs , 1990 .
[11] S. Blight,et al. Surface influence on the conductance DLTS spectra of GaAs MESFET's , 1986, IEEE Transactions on Electron Devices.
[12] F. Fantini,et al. Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's , 1986, IEEE Electron Device Letters.