Recent progress in GaN devices for power and integrated circuit

Several new technologies for GaN high frequency devices and GaN power devices are reviewed. Newly developed GaN devices have a superior performance over conventional Si ones in view of lowering the energy loss and reducing the system size. Normally-off GaN HFETs, GaN monolithic IC, GaN isolated gate driver ICs, and GaN 3×3 matrix converter IC are demonstrated. We believe these technologies will open “Green” power electronics in the future.