32nm 3-bit 32Gb NAND Flash Memory with DPT (d̲ouble p̲atterning t̲echnology) process for mass production

32nm 3-bit 32Gb NAND Flash Memory for mass production has been successfully developed for the first time. To shorten the development time and lower the cost, one side double patterning technology in a gate direction and the minimum number of spare blocks have been adopted. Additionally, considering endurance and data retention of cell characteristics, the optimal gate and active lengths are fixed in a stage of device design.