Silicon single photon avalanche diodes: situation and prospect

Photon counting was introduced and developed during four decades relying on Photomultiplier Tubes (PMT), but interesting alternatives are nowadays provided by solid-state single-photon microdetectors. In particular, Silicon Single-Photon Avalanche-Diodes (SPAD) attain remarkable basic performance, such as high photon detection efficiency over a broad spectral range up to 1 micron wavelength, low dark counting rate and photon timing jitter of a few tens of picoseconds. In recent years SPADs have emerged from the laboratory research phase and they are now commercially available from various manufactures. However, PMTs have much wider sensitive area, which greatly simplifies the design of optical systems; they attain remarkable performance at high counting rate and can provide position-sensitive photon detection and imaging capability. In order to make SPADs more competitive in a broader range of applications it is necessary to face issues in semiconductor device technology. The present state of the art, the prospect and main issues will be discussed.

[1]  M. Ghioni,et al.  Single-photon avalanche diode with ultrafast pulse response free from slow tails , 1993, IEEE Electron Device Letters.

[2]  Karl Hess,et al.  Electric field enhanced emission from non‐Coulombic traps in semiconductors , 1981 .

[3]  R. Haitz Mechanisms Contributing to the Noise Pulse Rate of Avalanche Diodes , 1965 .

[4]  G. Vincent,et al.  Electric field effect on the thermal emission of traps in semiconductor junctions , 1979 .

[5]  S. HERON,et al.  Measurements of Lifetimes of Excited States of Atoms by the Method of Delayed Coincidences , 1954, Nature.

[6]  Sherman K. Poultney,et al.  Single photon detection and timing - Experiments and techniques. , 1972 .

[7]  G. Pietri Towards Picosecond Resolution. Contribution of Microchannel Electron Multipliers to Vacuum Tube Design , 1975, IEEE Transactions on Nuclear Science.

[8]  Andrea L. Lacaita,et al.  Double epitaxy improves single-photon avalanche diode performance , 1989 .

[9]  S. Cova,et al.  SPADA: single-photon avalanche diode arrays , 2005, IEEE Photonics Technology Letters.

[10]  R. Cubeddu,et al.  A semiconductor detector for measuring ultraweak fluorescence decays with 70 ps FWHM resolution , 1983, IEEE Journal of Quantum Electronics.

[11]  A. Lacaita,et al.  New silicon epitaxial avalanche diode for single-photon timing at room temperature , 1988 .

[12]  A. Lacaita,et al.  Trapping phenomena in avalanche photodiodes on nanosecond scale , 1991, IEEE Electron Device Letters.

[13]  Edoardo Charbon,et al.  A single photon avalanche diode array fabricated in 0.35-μm CMOS and based on an event-driven readout for TCSPC experiments , 2006, SPIE Optics East.

[14]  S. Esener,et al.  STI-Bounded Single-Photon Avalanche Diode in a Deep-Submicrometer CMOS Technology , 2006, IEEE Electron Device Letters.

[15]  Andrew D. MacGregor,et al.  Photon-counting techniques with silicon avalanche photodiodes , 1993, Photonics West - Lasers and Applications in Science and Engineering.

[16]  Massimo Ghioni,et al.  Avalanche detector with ultraclean response for time-resolved photon counting , 1998 .

[17]  Arne Lundby,et al.  Scintillation Decay Times , 1950 .

[18]  S. Suzuki,et al.  Ultrafast microchannel plate photomultipliers. , 1988, Applied optics.

[19]  Sergio Cova,et al.  Performance comparison of a single‐photon avalanche diode with a microchannel‐plate photomultiplier in time‐correlated single‐photon counting , 1988 .

[20]  S. Cova,et al.  Monolithic active-quenching and active-reset circuit for single-photon avalanche detectors , 2003, IEEE J. Solid State Circuits.

[21]  S. Cova,et al.  Towards picosecond resolution with single-photon avalanche diodes , 1981 .

[22]  Angelo Gulinatti,et al.  35 ps time resolution at room temperature with large area single photon avalanche diodes , 2005 .

[23]  G. A. Morton Photomultipliers for Scintillation Counting , 1949 .

[24]  G. E. Thomas,et al.  Measurement of the Time Dependence of Scintillation Intensity by a Delayed‐Coincidence Method , 1961 .

[25]  Angelo Gulinatti,et al.  Planar silicon SPADs with 200-μm diameter and 35-ps photon timing resolution , 2006, SPIE Optics East.

[26]  Ivan Rech,et al.  Monolithic silicon matrix detector with 50 μm photon counting pixels , 2007 .