论文信息 - Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors

Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors

The authors report on the role of MgO capping layers in notably reducing leakage currents and improving mobility in ZnO thin film transistors (TFTs) utilizing compatible high-k Bi1.5Zn1.0Nb1.5O7 (BZN) gate insulators. All room temperature processed ZnO based TFTs with stacked MgO/BZN gate insulator exhibited a much enhanced field effect mobility of 5.4cm2∕Vs with excellent saturation characteristics as compared to that (μFE=1.13cm2∕Vs) of ZnO based TFTs with BZN gate insulator. This work demonstrates the suitability of MgO/BZN stacked gate insulators in the fabrication of low voltage ZnO based TFTs on plastic substrates.

[1] H. Tuller,et al. Mn-doped Ba0.6Sr0.4TiO3 high-K gate dielectrics for low voltage organic transistor on polymer substrate , 2005 .

[2] F. Menger,et al. Materials Based on Glycoluril , 2001 .

[3] C. Dimitrakopoulos,et al. Organic Thin Film Transistors for Large Area Electronics , 2002 .

[4] Raoul Schroeder,et al. One Volt Organic Transistor , 2005 .

[5] Jisheng Pan,et al. Evolution of Fermi level position and Schottky barrier height at Ni/MgO(0 0 1) interface , 2005 .

[6] A. Akinwande,et al. Low-voltage organic transistors and depletion-load inverters with high-K pyrochlore BZN gate dielectric on polymer substrate , 2005, IEEE Transactions on Electron Devices.

[7] Ho-Gi Kim,et al. Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering , 2006 .

[8] Bin Chen,et al. Leakage mechanism of (Ba0.7Sr0.3)TiO3 thin films in the low-temperature range , 2002 .

[9] J. Guimpel,et al. Tuning of the metal-insulator transition in La0.75Sr0.25MnO3∕PrBa2Cu3O7−δ superlattices , 2005 .