ReRAM: History, Status, and Future

This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms. This review also benchmarks the performance of various oxygen/oxygen vacancy and metal-ion-based ReRAM devices with general trend drawn. Being a semiconductor memory and storage technology, the commercialization attempts for both stand-alone mass storage/storage-class memory and embedded nonvolatile memory are also reviewed. Looking toward the coming era, the potential of using ReRAM technology to improve machine learning efficiency is discussed.

[1]  Chang Hua Siau,et al.  A 0.13µm 64Mb multi-layered conductive metal-oxide memory , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[2]  E. Lai,et al.  A Highly Reliable Self-Aligned Graded Oxide WOx Resistance Memory: Conduction Mechanisms and Reliability , 2007, 2007 IEEE Symposium on VLSI Technology.

[3]  N. Banno,et al.  High-Density and Fault-Tolerant Cu Atom Switch Technology Toward 28nm-node Nonvolatile Programmable Logic , 2018, 2018 IEEE Symposium on VLSI Technology.

[4]  Wei Zhiqiang,et al.  A ReRAM-based Physically Unclonable Function with Bit Error Rate < 0.5% after 10 years at 125°C for 40nm embedded application , 2016 .

[5]  Meng-Fan Chang,et al.  Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process , 2010, 2010 International Electron Devices Meeting.

[6]  Shimeng Yu,et al.  On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology , 2012, IEEE Transactions on Electron Devices.

[7]  Frederick T. Chen,et al.  Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[8]  N. Xu,et al.  Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention , 2008 .

[9]  K. Nagashima,et al.  Unipolar resistive switching characteristics of room temperature grown SnO2 thin films , 2009 .

[10]  L. Goux,et al.  Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers , 2010 .

[11]  B. Kleveland,et al.  512 Mb PROM with 8 layers of antifuse/diode cells , 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..

[12]  Yue Bai,et al.  Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications , 2013 .

[13]  L. Goux,et al.  Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device , 2012, IEEE Electron Device Letters.

[14]  Dai-Ying Lee,et al.  Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application , 2011 .

[15]  H. Ahn,et al.  Realization of vertical resistive memory (VRRAM) using cost effective 3D process , 2011, 2011 International Electron Devices Meeting.

[16]  C.J. Kim,et al.  Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates , 2008, 2008 IEEE International Electron Devices Meeting.

[17]  Y. Shih,et al.  A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability , 2010, 2010 International Electron Devices Meeting.

[18]  T. W. Hickmott.  LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS , 1962 .

[19]  X. Y. Liu,et al.  Current Compliance-Free Resistive Switching in Nonstoichiometric CeOx Films for Nonvolatile Memory Application , 2009, 2009 IEEE International Memory Workshop.

[20]  I. Yoo,et al.  2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications , 2007, 2007 IEEE International Electron Devices Meeting.

[21]  Byung Joon Choi,et al.  Resistive Switching in Pt ∕ Al2O3 ∕ TiO2 ∕ Ru Stacked Structures , 2006 .

[22]  D. Ielmini,et al.  Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction , 2008, 2008 IEEE International Electron Devices Meeting.

[23]  D. Wolansky,et al.  Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications , 2009 .

[24]  Dirk Wouters,et al.  Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell , 2011, 2011 3rd IEEE International Memory Workshop (IMW).

[25]  Malgorzata Jurczak,et al.  Extensive reliability investigation of a-VMCO nonfilamentary RRAM: Relaxation, retention and key differences to filamentary switching , 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

[26]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[27]  C. Chung,et al.  A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM) , 2012, 2012 International Electron Devices Meeting.

[28]  M. Kozicki,et al.  Conductive-bridge memory (CBRAM) with excellent high-temperature retention , 2013, 2013 IEEE International Electron Devices Meeting.

[29]  Yangyin Chen,et al.  ReRAM technology evolution for storage class memory application , 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

[30]  S. Ambrogio,et al.  Cycling-induced degradation of metal-oxide resistive switching memory (RRAM) , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[31]  Hagop Nazarian,et al.  Self-limited RRAM with ON/OFF resistance ratio amplification , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[32]  Shimeng Yu,et al.  Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

[33]  I. Baek,et al.  Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[34]  Zhichao Lu,et al.  Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip , 2017, 2017 IEEE International Memory Workshop (IMW).

[35]  I. Yoo,et al.  Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications , 2005, IEEE Electron Device Letters.

[36]  Y. Y. Lin,et al.  A CuxO-based resistive memory with low power and high reliability for SOC nonvolatile memory applications , 2010, 2010 IEEE International Memory Workshop.

[37]  Frederick T. Chen,et al.  Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance , 2010, 2010 International Electron Devices Meeting.

[38]  X. Y. Liu,et al.  Study of One Dimension Thickness Scaling on Cu/HfOx/Pt Based RRAM Device Performance , 2012, 2012 4th IEEE International Memory Workshop.

[39]  L. Goux,et al.  Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM , 2012, IEEE Transactions on Electron Devices.

[40]  L. Larcher,et al.  2D h-BN based RRAM devices , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[41]  Qi Liu,et al.  8-Layers 3D vertical RRAM with excellent scalability towards storage class memory applications , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[42]  A. Cabrini,et al.  Intrinsic program instability in HfO2 RRAM and consequences on program algorithms , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[43]  L. Goux,et al.  Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation , 2012, 2012 International Electron Devices Meeting.

[44]  L. Goux,et al.  Effect of anodic interface layers on the unipolar switching of HfO2-based resistive RAM , 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

[45]  L. Goux,et al.  Conductive-AFM tomography for 3D filament observation in resistive switching devices , 2013, 2013 IEEE International Electron Devices Meeting.

[46]  D. Wolansky,et al.  On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration , 2011 .

[47]  Ryutaro Yasuhara,et al.  A 4M Synapses integrated Analog ReRAM based 66.5 TOPS/W Neural-Network Processor with Cell Current Controlled Writing and Flexible Network Architecture , 2018, 2018 IEEE Symposium on VLSI Technology.

[48]  L. Goux,et al.  Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[49]  Davinder Kaur,et al.  Bipolar resistive switching behavior in Cu/AlN/Pt structure for ReRAM application , 2017 .

[50]  Chih-Yang Lin,et al.  Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films , 2008 .

[51]  Tuo-Hung Hou,et al.  High-performance Ni/SiO2/Si programmable metallization cell , 2011, The 4th IEEE International NanoElectronics Conference.

[52]  Z. Wei,et al.  Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model , 2011, 2011 International Electron Devices Meeting.

[53]  Chung-Wei Hsu,et al.  Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory , 2013, 2013 Symposium on VLSI Technology.

[54]  Chung-Wei Hsu,et al.  3D vertical TaOx/TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current , 2013, 2013 IEEE International Electron Devices Meeting.

[55]  N. M. Bashara,et al.  The reversible voltage-induced initial resistance in the negative resistance sandwich structure , 1964 .

[56]  L. Larcher,et al.  Metal oxide RRAM switching mechanism based on conductive filament microscopic properties , 2010, 2010 International Electron Devices Meeting.

[57]  Albert Chin,et al.  Novel Ultra-low power RRAM with good endurance and retention , 2010, 2010 Symposium on VLSI Technology.

[58]  O. Richard,et al.  Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory. , 2015, Nano letters.

[59]  P. Zhou,et al.  Improvement of Endurance and Switching Stability of Forming-Free CuxO RRAM , 2008, 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design.

[60]  S. O. Park,et al.  Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[61]  H. Akinaga,et al.  Resistance switching in the metal deficient-type oxides: NiO and CoO , 2007 .

[62]  Dongsoo Lee,et al.  Resistance switching of Al doped ZnO for Non Volatile Memory applications , 2006, 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.

[63]  L. Goux,et al.  Switching by Ni Filaments in a HfO2 Matrix: A New Pathway to Improved Unipolar Switching RRAM , 2011, International Memory Workshop.

[64]  T. W. Hickmott,et al.  BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES , 1965 .

[65]  O. Richard,et al.  Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell , 2013, 2013 IEEE International Electron Devices Meeting.

[66]  Chien-Hung Yeh,et al.  Unipolar Switching Characteristics for Self-Aligned WOx Resistance RAM (R-RAM) , 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

[67]  X. Li,et al.  Highly compact 1T-1R architecture (4F2 footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting excellent NVM properties and ultra-low power operation , 2012, 2012 International Electron Devices Meeting.

[68]  B. Govoreanu,et al.  Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>102) on/off window, tunable μA-range switching current and excellent variability , 2016, 2016 IEEE Symposium on VLSI Technology.

[69]  S. Sze,et al.  A floating gate and its application to memory devices , 1967 .

[70]  Hyunsang Hwang,et al.  Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications , 2010, 2010 International Electron Devices Meeting.

[71]  Shosuke Fujii,et al.  Ag Ionic Memory Cell Technology for Terabit-Scale High-Density Application , 2019, 2019 Symposium on VLSI Technology.

[72]  Steve S. Chung,et al.  Fully CMOS compatible 3D vertical RRAM with self-aligned self-selective cell enabling sub-5nm scaling , 2016, 2016 IEEE Symposium on VLSI Technology.

[73]  Zizhen Jiang,et al.  First demonstration of RRAM patterned by block copolymer self-assembly , 2013, 2013 IEEE International Electron Devices Meeting.

[74]  H. Hwang,et al.  Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application , 2005 .

[75]  U-In Chung,et al.  Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications , 2006, 2009 Symposium on VLSI Technology.

[76]  Kuo-Pin Chang,et al.  A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[77]  S. J. Kim,et al.  Low power operating bipolar TMO ReRAM for sub 10 nm era , 2010, 2010 International Electron Devices Meeting.

[78]  Shimeng Yu,et al.  A phenomenological model of oxygen ion transport for metal oxide resistive switching memory , 2010, 2010 IEEE International Memory Workshop.

[79]  J. G. Wu,et al.  A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and Excellent Thermal Stability , 2009, 2009 IEEE International Memory Workshop.

[80]  C. Y. Chen,et al.  Doped Gd-O Based RRAM for Embedded Application , 2016, 2016 IEEE 8th International Memory Workshop (IMW).

[81]  C. H. Lin,et al.  Random soft error suppression by stoichiometric engineering: CMOS compatible and reliable 1Mb HfO2-ReRAM with 2 extra masks for embedded IoT systems , 2016, 2016 IEEE Symposium on VLSI Technology.

[82]  Harold J. Hovel,et al.  Switching and Memory Characteristics of ZnSe - Ge Heterojunctions , 1971 .

[83]  Manabu Sato,et al.  A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology , 2020, IEEE Journal of Solid-State Circuits.

[84]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[85]  R. Degraeve,et al.  Performance and reliability of Ultra-Thin HfO2-based RRAM (UTO-RRAM) , 2013, 2013 5th IEEE International Memory Workshop.

[86]  Z. Wei,et al.  Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism , 2008, 2008 IEEE International Electron Devices Meeting.

[87]  L. Goux,et al.  Intrinsic switching variability in HfO2 RRAM , 2013, 2013 5th IEEE International Memory Workshop.

[88]  Tahone Yang,et al.  A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory , 2006, 2006 International Electron Devices Meeting.

[89]  Hyunsang Hwang,et al.  Novel cross-point resistive switching memory with self-formed schottky barrier , 2010, 2010 Symposium on VLSI Technology.

[90]  P. Debacker,et al.  Design-technology co-optimization for OxRRAM-based synaptic processing unit , 2017, 2017 Symposium on VLSI Technology.

[91]  Ryutaro Yasuhara,et al.  Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[92]  Frederick T. Chen,et al.  Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications , 2008 .

[93]  Guido Groeseneken,et al.  Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design , 2013, 2013 5th IEEE International Memory Workshop.

[94]  Zhiwei Li,et al.  Binary neural network with 16 Mb RRAM macro chip for classification and online training , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[95]  K. Terabe,et al.  A Ta2O5 solid-electrolyte switch with improved reliability , 2007, 2007 IEEE Symposium on VLSI Technology.

[96]  Dong Uk Lee,et al.  Resistive-switching memory effect of hybrid structures with polyimide and SnO2 nanocrystals. , 2012, Journal of nanoscience and nanotechnology.

[97]  Byoungil Lee,et al.  NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path , 2006, 2009 Symposium on VLSI Technology.

[98]  K. Shimakawa,et al.  Fast switching and long retention Fe-O ReRAM and its switching mechanism , 2007, 2007 IEEE International Electron Devices Meeting.

[99]  C. Lin,et al.  High density and ultra small cell size of Contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[100]  L. Larcher,et al.  Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices , 2011, 2011 International Electron Devices Meeting.

[101]  Y. Iwata,et al.  Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory , 2007, 2007 IEEE Symposium on VLSI Technology.

[102]  Kinam Kim,et al.  Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node , 2006, 2006 International Electron Devices Meeting.

[103]  Wen-Chieh Shih,et al.  Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device , 2010 .

[104]  Meng-Fan Chang,et al.  A 16Mb dual-mode ReRAM macro with sub-14ns computing-in-memory and memory functions enabled by self-write termination scheme , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[105]  S. Haddad,et al.  Non-volatile resistive switching for advanced memory applications , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[106]  Qing Luo,et al.  40× Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

[107]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[108]  Yoshiji Ohta,et al.  CoOx-RRAM memory cell technology using recess structure for 128Kbits memory array , 2010, 2010 IEEE International Memory Workshop.

[109]  John Dinh,et al.  A High Performance and Low Power Logic CMOS Compatible Embedded 1Mb CBRAM Non-Volatile Macro , 2011, 2011 3rd IEEE International Memory Workshop (IMW).

[110]  Kinam Kim,et al.  Bi-layered RRAM with unlimited endurance and extremely uniform switching , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

[111]  D. Ielmini,et al.  Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode , 2009, 2009 IEEE International Memory Workshop.

[112]  L. Goux,et al.  On the Bipolar and Unipolar Switching Mechanisms Observed in NiO Memory Cells Made by Thermal Oxidation of Ni , 2009, 2009 IEEE International Memory Workshop.

[113]  O. Richard,et al.  10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation , 2011, 2011 International Electron Devices Meeting.

[114]  L. Goux,et al.  Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current , 2013, 2013 IEEE International Electron Devices Meeting.

[115]  Jian Wu,et al.  Technology and circuit optimization of resistive RAM for low-power, reproducible operation , 2014, 2014 IEEE International Electron Devices Meeting.

[116]  H. Wong,et al.  Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration , 2014, 2014 IEEE International Electron Devices Meeting.

[117]  M. Kozicki,et al.  Nanoscale memory elements based on solid-state electrolytes , 2005, IEEE Transactions on Nanotechnology.

[118]  Jinfeng Kang,et al.  BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[119]  Tuo-Hung Hou,et al.  Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode , 2010 .

[120]  Albert Chin,et al.  Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory , 2011 .

[121]  Alessandro Calderoni,et al.  Engineering ReRAM for high-density applications , 2015 .

[122]  Frederick T. Chen,et al.  Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM , 2008, 2008 IEEE International Electron Devices Meeting.

[123]  Z. Wei,et al.  A ReRAM-based physically unclonable function with bit error rate < 0.5% after 10 years at 125°C for 40nm embedded application , 2016, 2016 IEEE Symposium on VLSI Technology.

[124]  K. Aratani,et al.  A Novel Resistance Memory with High Scalability and Nanosecond Switching , 2007, 2007 IEEE International Electron Devices Meeting.

[125]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[126]  C. Hu,et al.  9nm half-pitch functional resistive memory cell with <1µA programming current using thermally oxidized sub-stoichiometric WOx film , 2010, 2010 International Electron Devices Meeting.

[127]  Koo Woong Jeong,et al.  Resistive switching characteristics of unique binary-oxide MgOx films , 2006 .

[128]  J. G. Wu,et al.  A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications , 2010, 2010 Symposium on VLSI Technology.

[129]  N. Xu,et al.  Oxide-based RRAM switching mechanism: A new ion-transport-recombination model , 2008, 2008 IEEE International Electron Devices Meeting.

[130]  Chih-Yuan Lu,et al.  A novel tite buffered Cu-GeSbTe/SiO2 electrochemical resistive memory (ReRAM) , 2010, 2010 Symposium on VLSI Technology.

[131]  P. Bai,et al.  Non-Volatile RRAM Embedded into 22FFL FinFET Technology , 2019, 2019 Symposium on VLSI Technology.

[132]  L. B. Zhang,et al.  Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents , 2011 .

[133]  Frederick T. Chen,et al.  Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory , 2008 .

[134]  L. Goux,et al.  On the Gradual Unipolar and Bipolar Resistive Switching of TiN\ HfO2\Pt Memory Systems , 2010 .

[135]  H. Wong,et al.  Forming-free nitrogen-doped AlOX RRAM with sub-μA programming current , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

[136]  Congyin Shi,et al.  Forming-Less Unipolar TaOx-Based RRAM with Large CC-Independence Range for High Density Memory Applications , 2010 .

[137]  L. Goux,et al.  Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device , 2012 .

[138]  Alessandro Calderoni,et al.  A copper ReRAM cell for Storage Class Memory applications , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

[139]  Y. Inoue,et al.  High Speed Unipolar Switching Resistance RAM (RRAM) Technology , 2006, 2006 International Electron Devices Meeting.

[140]  H.-S. Philip Wong,et al.  Ultra-low power Al2O3-based RRAM with 1μA reset current , 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

[141]  Guido Groeseneken,et al.  Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO2\Hf\TiN RRAM Device , 2013 .

[142]  R. Degraeve,et al.  Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

[143]  Winfried W. Wilcke,et al.  Storage-class memory: The next storage system technology , 2008, IBM J. Res. Dev..

[144]  Jae Yeon Lee,et al.  Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[145]  M. Tada,et al.  A new approach for improving operating margin of unipolar ReRAM using local minimu m of reset voltage , 2010, 2010 Symposium on VLSI Technology.

[146]  L. Goux,et al.  Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[147]  周鹏,et al.  Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications , 2008 .

[148]  K. Tsunoda,et al.  Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V , 2007, 2007 IEEE International Electron Devices Meeting.

[149]  Jinfeng Kang,et al.  On the bipolar and unipolar resistive switching characteristics in Ag/SiO2/Pt memory cells , 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

[150]  W. E. Beadle,et al.  Switching properties of thin Nio films , 1964 .

[151]  Qing-Qing Sun,et al.  Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application , 2011 .

[152]  W. Dehaene,et al.  Temporal sequence learning with a history-sensitive probabilistic learning rule intrinsic to oxygen vacancy-based RRAM , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

[153]  O. Richard,et al.  A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[154]  Albert Chin,et al.  Bipolar switching characteristics of low-power Geo resistive memory , 2011 .

[155]  C. Gerber,et al.  Reproducible switching effect in thin oxide films for memory applications , 2000 .

[156]  Albert Chin,et al.  High performance ultra-low energy RRAM with good retention and endurance , 2010, 2010 International Electron Devices Meeting.

[157]  T. Takagi,et al.  Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current , 2013, IEEE Transactions on Electron Devices.

[158]  C. Gopalan,et al.  Erase mechanism for copper oxide resistive switching memory cells with nickel electrode , 2006, 2006 International Electron Devices Meeting.

[159]  Philippe Roussel,et al.  Understanding Endurance in TiN/a-Si/TiOx/TiN RRAM Devices , 2018, 2018 IEEE International Memory Workshop (IMW).

[160]  Shimeng Yu,et al.  Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory , 2012, 2012 International Electron Devices Meeting.

[161]  Qi Liu,et al.  Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[162]  G. Burr,et al.  Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays , 2010, 2010 Symposium on VLSI Technology.

[163]  S. Jo,et al.  3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector , 2014, 2014 IEEE International Electron Devices Meeting.

[164]  Y. C. Chen,et al.  Multi-Level Operation of Fully CMOS Compatible WOX Resistive Random Access Memory (RRAM) , 2009, 2009 IEEE International Memory Workshop.

[165]  Siyoung Choi,et al.  Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND Flash memory devices and SSD (Solid State Drive) , 2006, 2009 Symposium on VLSI Technology.