Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities
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[1] R. Divakaruni,et al. A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications , 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
[2] Chris H. Kim,et al. A 32nm, 0.9V Supply-noise sensitivity tracking PLL for improved clock data compensation featuring a deep trench capacitor based loop filter , 2013, 2013 Symposium on VLSI Circuits.
[3] Fatih Hamzaoglu,et al. Multi-Phase 1 GHz Voltage Doubler Charge Pump in 32 nm Logic Process , 2010, IEEE Journal of Solid-State Circuits.
[4] Michael D. Seeman,et al. A 32nm fully integrated reconfigurable switched-capacitor DC-DC converter delivering 0.55W/mm2 at 81% efficiency , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).
[5] Michel Declercq,et al. A high-efficiency CMOS voltage doubler , 1998, IEEE J. Solid State Circuits.
[6] Bernhard Wunder,et al. Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond , 2012, 2012 IEEE International Conference on IC Design & Technology.
[7] T. Kirihata,et al. A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology , 2010, 2010 International Electron Devices Meeting.
[8] Fatih Hamzaoglu,et al. Multi-phase 1GHz voltage doubler charge-pump in 32nm logic process , 2009, 2009 Symposium on VLSI Circuits.
[9] R. Dennard,et al. A fully-integrated switched-capacitor 2∶1 voltage converter with regulation capability and 90% efficiency at 2.3A/mm2 , 2010, 2010 Symposium on VLSI Circuits.