Reliability testing of high-power multi-chip IGBT modules

Abstract Power-cycling tests are among the most important tools used for evaluating the reliability of power modules. They are in most cases carried out at the rated module current and during a relatively short cycle time, i.e. under worst-case operating conditions. Test conditions must be defined which also permit information to be obtained about failure mechanisms in the various parts of the module. This paper describes the measurement of the temperature distribution, the test conditions, the rates of temperature change in modules with 36 semiconductor components as well as the results of power-cycling tests in which the thermomechanical stress principally affects the substrate-baseplate interface.