InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain‐bandwidth product

A wide bandwidth (8 GHz) and a high gain‐bandwidth product (70 GHz) have been achieved with InP/InGaAsP/InGaAs avalanche photodiodes (APD’s) grown by chemical beam epitaxy. These APD’s also exhibit low dark current ( 90% at λ=1.3 μm), and high avalanche gain (M0≂40).

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