Influence of Metal and Polymer Substrate on SiCxNyOz Film Formation by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

Using the plasma-enhanced chemical vapordeposition without any heating assistance, a SiC x N y O z film was formed on a substrate made of metals and polymers, such as aluminum, tin, polyethylene naphthalate, polyvinylchloride and polytetrafluoroethylene. These havelowmeltingpointsandlowglasstransition temperatures.Utilizing non-corrosivegases,suchasmonomethylsilane,nitrogenand argon, at 10–20 Pa, 80–500 nm-thick films were obtained. The film thickness and film composition of the silicon, carbon, nitrogen and oxygen were found to depend on the substrate material. When the substrate contained oxygen, chlorine and fluorine atoms, the film became thin and contained a high oxygen concentration.

[1]  S. King.  Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects , 2015 .

[2]  Y. Nishimoto,et al.  Copper Barrier Properties of Low Dielectric Constant SiOCNH Film Deposited by Plasma-Enhanced CVD , 2004 .

[3]  Arrelaine A. Dameron,et al.  Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition , 2009 .

[4]  Hitoshi Habuka,et al.  Effect of Transport Phenomena on Boron Concentration Profiles in Silicon Epitaxial Wafers , 1996 .

[5]  Christophe Ballif,et al.  Influence of the substrate geometrical parameters on microcrystalline silicon growth for thin-film solar cells , 2009 .

[6]  Non-heat assistance chemical vapor deposition of amorphous silicon carbide using monomethylsilane gas under argon plasma , 2016 .

[7]  Mohamed Latreche,et al.  Transparent barrier coatings on polyethylene terephthalate by single- and dual-frequency plasma-enhanced chemical vapor deposition , 1998 .

[8]  Hitoshi Habuka,et al.  Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition of SiCxNyOzFilm Using Monomethylsilane, Nitrogen and Argon , 2017 .

[9]  A. D. Johnson,et al.  Silicon precursor development for advanced dielectric barriers for VLSI technology , 2012 .

[10]  Alfred Grill,et al.  Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art , 2014 .

[11]  D. Manos,et al.  Synthesis of carbon nanosheets by inductively coupled radio-frequency plasma enhanced chemical vapor deposition , 2004 .

[12]  P. H. Robinson,et al.  Autodoping of Silicon Films Grown Epitaxially on Sapphire , 1966 .

[13]  Yu‐Der Lee,et al.  The Effects of Filler Content and Size on the Properties of PTFE/SiO2 Composites , 2003 .

[14]  G. R. Srinivasan.  Autodoping Effects in Silicon Epitaxy , 1980 .

[15]  Tianqing Liao,et al.  Synthesis of core–shell PMMA–SiO2 nanoparticles with suspension–dispersion–polymerization in an aqueous system and its effect on mechanical properties of PVC composites , 2008 .

[16]  G. Dingemans,et al.  Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD , 2010 .