Cross-linking thin film characterization technique for data storage, semiconductor, and flat panel display devices

In manufacturing devices used in the data storage, semiconductor, and flat panel display industries, thin layers of materials are deposited on a particular substrate. These films may consist of semiconductors, dielectrics, polymers, dyes, (photoresist, resin, etc.), color filters, and metal films. In addition to silicon, substrates may consist of glass, quartz, poly-carbonate, or PET. In order to optimize the performance of these devices, an effective thin film characterization method is needed that can measure these thin film structures. We will present a technique that determines, thickness, spectra of n and k from 190 to 900 nm, Eg, and interface roughness of the 'film/substrate' combinations used in the aforementioned industries. This technique is based on wide-band spectrophotometry, combined with spectral analysis incorporating the Forouhi-Bloomer dispersion equations for n and k. The technique offers an excellent signal to noise ratio even in the deep UV wavelength range (below 350 nm) and takes 1 second for the entire measurement.