Correction to "hot-carrier degradation of the low-frequency noise in MOS transistors under analog an

[1]  J. T. Winkel Extended charge-control model for bipolar transistors , 1973 .

[2]  J.A. Seitchik,et al.  An accurate bipolar model for large signal transient and ac applications , 1987, 1987 International Electron Devices Meeting.

[3]  Niccolò Rinaldi,et al.  Modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels , 1998 .

[4]  C. R. Selvakumar,et al.  The general transient charge control relation: a new charge control relation for semiconductor devices , 1991 .

[5]  H. Klose,et al.  The transient integral charge control relation—A novel formulation of the currents in a bipolar transistor , 1987, IEEE Transactions on Electron Devices.

[6]  Michael Schroter,et al.  A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities , 1993 .

[7]  NiccolòF. Rinaldi Modelling of collector signal delay effects in bipolar transistors , 1999 .

[8]  Ralf Brederlow,et al.  Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions , 2002 .

[9]  J. Hamel A quasi-static approach for modeling the influence of emitter stored charge on the high frequency small signal a.c. response of bipolar transistors , 1994, Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[10]  H. C. de Graaff,et al.  Analysis and modeling of small-signal bipolar transistor operation at arbitrary injection levels , 1998 .