Back-gate-input MOS—-A new low-power logic concept

Modern large-scale integrated circuits have been realized mainly by reducing the dimensions of the building blocks, i.e., transistors. This has lead to the problem of intensified electric fields in semiconductor devices. One major difficulty device designers are confronted with is avalanche breakdown in MOSFET's accompanied by the "snapback" phenomena and carrier injection into the oxide. In addition, the packing density in integrated circuits will ultimately be limited by the power dissipation. It is obvious that these problems can be alleviated by employing devices which operate at lower voltages with lower power consumption.