Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector
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E. S. Yang | Y. F. Yang | C. Hsu | E. Yang | C. C. Hsu | Hai-Jiang Ou | Ta-Chien Huang | Ta-Chien Huang | H. Ou
[1] Y. F. Yang,et al. High frequency and low noise C-doped GaInP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP , 1996 .
[2] The Influence of Fermi-Level Pinning at the GaAs Substrate on HEMT threshold Voltage , 1990 .
[3] D. Shaw,et al. Localized GaAs Etching with Acidic Hydrogen Peroxide Solutions , 1981 .
[4] Y. F. Yang,et al. Carbon doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain , 1995 .
[5] D.L. Miller,et al. GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers , 1984, IEEE Electron Device Letters.
[6] A. K. Oki,et al. GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications , 1989 .
[7] J. Hayes,et al. Self-aligned InAlAs/InGaAs heterojunction bipolar transistor with a buried subcollector grown by selective epitaxy , 1994, IEEE Electron Device Letters.
[8] Peter M. Asbeck,et al. GaAlAs/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application , 1991 .
[9] Osaake Nakajima,et al. Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layer , 1986 .
[10] M.F. Chang,et al. High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantation , 1995, IEEE Electron Device Letters.
[11] N. H. Sheng,et al. GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application , 1989 .
[12] Y. F. Yang,et al. Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors , 1995 .
[13] Dimitris Pavlidis,et al. Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data , 1992 .