A Sub-1W to 2W Low-Power IA Processor for Mobile Internet Devices and Ultra-Mobile PCs in 45nm Hi-Κ Metal Gate CMOS
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Belliappa Kuttanna | Gianfranco Gerosa | Bo Jiang | Steve Curtis | Michael D'Addeo | Feroze Merchant | Binta Patel | Mohammed H. Taufique | Haytham Samarchi | G. Gerosa | Bo Jiang | B. Kuttanna | M. D'Addeo | Steve Curtis | Feroze Merchant | Binta Patel | Haytham Samarchi
[1] Uddalak Bhattacharya,et al. A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.
[2] Alan F. Murray,et al. IEEE International Solid-State Circuits Conference , 2001 .
[3] Yong-Gee Ng,et al. A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology , 2009, IEEE Journal of Solid-State Circuits.
[4] Ken Smits,et al. Penryn: 45-nm next generation Intel® core™ 2 processor , 2007, 2007 IEEE Asian Solid-State Circuits Conference.
[5] R. Chau,et al. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging , 2007, 2007 IEEE International Electron Devices Meeting.