State-of-the-art THz integrated circuits in InP HBT technologies

In this paper, state-of-the-art terahertz (THz) integrated circuits in InP HBT technologies operating in the 500–600 GHz band are reviewed: the highest-frequency fundamental transistor oscillator, THz power amplifier in HBT with the highest saturated output power, the highest-frequency dynamic frequency divider, and the highest-frequency transmit/receive front-end integrated circuits, to the best of authors' knowledge.

[1]  M. Urteaga,et al.  130 nm InP DHBTs with ft > 0 . 52 THz and fmax > 1 . 1 THz , 2011 .

[2]  Munkyo Seo,et al.  A 600 GHz InP HBT amplifier using cross-coupled feedback stabilization and dual-Differential Power Combining , 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

[3]  Munkyo Seo,et al.  InP HBT Technologies for THz Integrated Circuits , 2017, Proceedings of the IEEE.

[4]  V. Jain,et al.  130nm InP DHBTs with ft >0.52THz and fmax >1.1THz , 2011, 69th Device Research Conference.

[5]  Munkyo Seo,et al.  InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz , 2011, IEEE Journal of Solid-State Circuits.

[6]  Munkyo Seo,et al.  A 529 GHz dynamic frequency divider in 130 nm InP HBT process , 2015, IEICE Electron. Express.

[7]  M. Seo,et al.  A single-chip 630 GHz transmitter with 210 GHz sub-harmonic PLL local oscillator in 130 nm InP HBT , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.