Further process of polarization within a pixellated CdZnTe detector under intense x-ray irradiation

[1]  Aleksey E. Bolotnikov,et al.  Rejecting incomplete charge-collection events in CdZnTe and other semiconductor detectors , 2012 .

[2]  Yanfeng Du,et al.  CZT performance for different anode pixel geometries and data corrections , 2011 .

[3]  R. James,et al.  Variation of Electric Shielding on Virtual Frisch-Grid Detectors , 2010 .

[4]  Xiao Shali,et al.  Investigation of the Imaging Polarization Effect Based on a Pixellated CdZnTe Detector , 2010 .

[5]  A. Lohstroh,et al.  Investigation of the internal electric field distribution under in situ x-ray irradiation and under low temperature conditions by the means of the Pockels effect , 2010 .

[6]  Gangqiang Zha,et al.  Characterization of CdZnTe crystal grown by bottom-seeded Bridgman and Bridgman accelerated crucible rotation techniques , 2009 .

[7]  D. Darambara,et al.  An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging , 2009 .

[8]  Csaba Szeles,et al.  A mechanism for dynamic lateral polarization in CdZnTe under high flux x-ray irradiation , 2008 .

[9]  A. Dragone,et al.  Readout ASIC for 3D Position-Sensitive Detectors , 2008, IEEE Transactions on Nuclear Science.

[10]  J. Mackenzie,et al.  Polarization Studies of CdZnTe Detectors Using Synchrotron X-Ray Radiation , 2008, IEEE Transactions on Nuclear Science.

[11]  Francesco Fauci,et al.  Spectroscopic response of a CdZnTe multiple electrode detector , 2007 .

[12]  Kiril D. Ianakiev,et al.  Effect of differential bias on the transport of electrons in coplanar grid CdZnTe detectors , 2002 .

[13]  D. Mcgregor,et al.  Room-temperature compound semiconductor radiation detectors , 1997 .