Modeling and analysis of GaAs MESFETs considering the wave propagation effect

The effect of wave propagation along the electrodes of a GaAs MESFET is studied using a distributed circuit analysis technique. Each unit equivalent circuit consists of two subequivalent circuits, one modeling the transmission-line properties of the coupled gate and drain electrodes, and the other representing the traditional GaAs MESFET small-signal model. The distributed equivalent circuit is then analyzed using SUPER-COMPACT. The maximum available power gain or the maximum stable power gain of the device is calculated as a function of device width. It is shown that, for single-gate MESFETs over 100 mu m wide, the transmission-line properties of the electrodes have a significant effect on the transistor performance. The power gain also depends on where the input signal is fed and where the output signal is extracted.<<ETX>>