Improved transparent conductive oxide/p+/i junction in amorphous silicon solar cells by tailored hydrogen flux during growth

[1]  T. Kamiya,et al.  Fabrication of Solar Cells Having SiH2Cl2 Based I-Layer Materials , 1999 .

[2]  H. Schade,et al.  Recent developments of silicon thin film solar cells on glass substrates , 1999 .

[3]  H. Fujiwara,et al.  Real time spectroscopic ellipsometry characterization of structural and thermal equilibration of amorphous silicon–carbon alloy p layers in p-i-n solar cell fabrication , 1998 .

[4]  M. Favre,et al.  In-situ Kelvin probe and ellipsometry study of the doping of a-Si : H and a-SiC : H layers:: Correlation with solar cell parameters , 1998 .

[5]  J. Abelson,et al.  Does a dipole layer at the p–i interface reduce the built-in voltage of amorphous silicon p–i–n solar cells? , 1997 .

[6]  J. Abelson,et al.  Si–C–H bonding in amorphous Si1−xCx:H film/substrate interfaces determined by real time infrared absorption during reactive magnetron sputter deposition , 1995 .

[7]  J. Abelson,et al.  Hydrogen‐surface reactions during the growth of hydrogenated amorphous silicon by reactive magnetron sputtering: A real time kinetic study by in situ infrared absorption , 1995 .

[8]  D. Jones,et al.  Interaction in the Cr/amorphous‐silicon system , 1995 .

[9]  J. Abelson,et al.  Subsurface hydrogenated amorphous silicon to μc‐hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry , 1994 .

[10]  R. Collins,et al.  Real time spectroellipsometry study of the interaction of hydrogen with ZnO during ZnO/a‐Si1−xCxH interface formation , 1994 .

[11]  M. Nishitani,et al.  Enhanced conductivity of zinc oxide thin films by ion implantation of hydrogen atoms , 1994 .

[12]  S. R. Reddy,et al.  Hydrogen plasma degradation of SnO2:F films prepared by the APCVD method , 1993 .

[13]  Chuan Yi Tang,et al.  A 2.|E|-Bit Distributed Algorithm for the Directed Euler Trail Problem , 1993, Inf. Process. Lett..

[14]  J. Abelson,et al.  Ellipsometry and x‐ray photoelectron spectroscopy study of SnO2 reduction at the interface with sputtered a‐Si:H , 1993 .

[15]  J. Abelson.  Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface , 1993 .

[16]  M. Isomura,et al.  Dependence of Open Circuit Voltage of Amorphous Silicon Solar Cells on Thickness and Doping Level of the p-Layer , 1993 .

[17]  N. Maley.  Interference-Free Determination of the Absorption Coefficient of Amorphous Silicon Thin Films , 1992 .

[18]  Stephen J. Fonash,et al.  Computer analysis of the role of p‐layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p‐i‐n solar cells , 1991 .

[19]  Stephen J. Fonash,et al.  Computer simulation of actual and Kelvin‐probe‐measured potential profiles: Application to amorphous films , 1990 .

[20]  Shinsuke Konaka,et al.  A low-permittivity interconnection using an SiBN interlayer , 1989 .

[21]  B. Drévillon,et al.  In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces , 1989 .

[22]  F. Z. Bathaei,et al.  Amorphous semiconductor technologies and devices: Y. Hamakawa, Editor Published by Ohmsha Ltd. and North Holland Publishing Co. Price £78.57 , 1989 .

[23]  B. Drévillon,et al.  A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides , 1989 .

[24]  J. Abelson,et al.  Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties, hydrogen bonding and microstructure , 1989 .

[25]  A. Eicke,et al.  XPS and SIMS characterization of metal oxide/amorphous silicon—carbon interfaces , 1988 .

[26]  Y. Nakato,et al.  The Effect of Interposing Thin Oxide Layers on the Photovoltaic Properties of a-Si:H Solar Cells. I. Between a-Si:H and Transparent Conductive Oxide Layers , 1988 .

[27]  S. Badrinarayanan,et al.  Evidence for a solid state reaction at the a-SiSnOx interface: An x-ray photoelectron spectroscopy study☆ , 1986 .

[28]  H. Schade,et al.  Contact resistance measurements for hydrogenated amorphous silicon solar cell structures , 1986 .

[29]  K. L. Chopra,et al.  Annealing studies of undoped and indium-doped films of zinc oxide , 1984 .

[30]  J. H. Thomas,et al.  Hydrogen plasma interactions with tin oxide surfaces , 1984 .

[31]  S. K. Deb,et al.  Properties of amorphous hydrogenated silicon-tin alloys prepared by radio frequency sputtering , 1984 .

[32]  J. H. Thomas,et al.  Auger electron and x‐ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon‐tin oxide interface: Evidence of a plasma‐induced reaction , 1983 .

[33]  J. H. Thomas.  X‐ray photoelectron spectroscopy study of hydrogen plasma interactions with a tin oxide surface , 1983 .

[34]  F. Sanchez-Sinencio,et al.  Barrier at the interface between amorphous silicon and transparent conducting oxides and its influence on solar cell performance , 1983 .

[35]  J. Robertson.  Japan Annual Reviews in Electronics, Computers and Telecommunications , 1982 .

[36]  B. Goldstein,et al.  Work function and Auger measurements of the initial oxidation of hydrogenated amorphous Si and of single‐crystal Si , 1978 .

[37]  K. Besocke,et al.  Piezoelectric driven Kelvin probe for contact potential difference studies , 1976 .

[38]  R. Swalin,et al.  Thermodynamics of solids , 1962 .

[39]  M. Kakihana,et al.  Materials Research Society Symposium - Proceedings , 2000 .

[40]  Hellmut Fritzsche,et al.  Amorphous silicon and related materials , 1989 .

[41]  John D. Joannopoulos,et al.  The Physics of Hydrogenated Amorphous Silicon I , 1984 .

[42]  J A Dobrowolski,et al.  Versatile computer program for absorbing optical thin film systems. , 1981, Applied optics.

[43]  W. Göpel.  Oxygen interaction of stoichiometric and non-stoichiometric ZnO prismatic surfaces , 1977 .

[44]  G. Heiland,et al.  Polar surfaces of zinc oxide crystals , 1969 .