Design guidelines of current source gate driver for series connected SiC MOSFETs

The series connection of low voltage devices is one option of forming a device with higher voltage rating. The biggest challenge of series connected devices is drain-source voltage unequal sharing caused by differences among each device. A current source gate driver for series connected SiC MOSFETs is demonstrated in previous work. The proposed current source gate driver can generate highly synchronized gate voltages because of its constant gate current and novel gate driver structure. But in previous work, the design considerations are not explained in detail. This paper will provide detailed design guidelines of each stage in terms of control strategy and hardware.

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