Trends in power discrete devices

Over the last 10 years, revolutionary advances have occurred in power discrete devices which have spurred significant advances in the capability of power electronic systems. The introduction of power MOSFETs in the 1970s and the power IGBT in the 1980s enabled design of very compact, high efficiency systems due to the greatly enhanced power gain resulting from the high input impedance of these structures. Since then, research at PSRC on a variety of MOS-gated thyristors (DG-BRT, EST) has been conducted, resulting in some promising improvements in the trade-off between on-state power loss, switching power loss, and the forward biased safe-operating-area (FBSOA). Concurrent improvements in power rectifiers have been achieved at low voltage ratings using the TMBS structure, and at high voltage ratings using the MPS structure. On the longer term, silicon carbide Schottky rectifiers and power MOSFETs offer another 10-fold improvement in performance if technological and cost barriers can be overcome.

[1]  Bantval J. Baliga,et al.  Inversion Layer Mobility in SiC MOSFETs , 1997 .

[2]  M. Melloch,et al.  High-voltage double-implanted power MOSFET's in 6H-SiC , 1997, IEEE Electron Device Letters.

[3]  B.J. Baliga,et al.  Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier , 1987, IEEE Electron Device Letters.

[4]  John W. Palmour,et al.  Improved oxidation procedures for reduced SiO2/SiC defects , 1996 .

[5]  R. Raghunathan,et al.  High voltage 4H-SiC Schottky barrier diodes , 1995, IEEE Electron Device Letters.

[6]  P. Shenoy,et al.  The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structure , 1997, IEEE Electron Device Letters.

[7]  B. J. Baliga,et al.  The pinch rectifier: A low-forward-drop high-speed power diode , 1984, IEEE Electron Device Letters.

[8]  B.J. Baliga.  The MOS-gated emitter switched thyristor , 1990, IEEE Electron Device Letters.

[9]  Bantval J. Baliga,et al.  Comparison of ultralow specific on-resistance UMOSFET structures: the ACCUFET, EXTFET, INVFET, and conventional UMOSFET's , 1994 .

[10]  S. Sawant,et al.  4 kV merged PiN Schottky (MPS) rectifiers , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[11]  Y. Seki,et al.  2nd generation dual gate MOS thyristor , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[12]  B. Jayant Baliga,et al.  Trench MOS Barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage , 1995 .

[13]  R. Raghunathan,et al.  Planar edge termination for 4H-silicon carbide devices , 1996 .

[14]  Michael Stoisiek,et al.  Turn-On Principles of the MOS-GTO , 1987, IEEE Transactions on Power Electronics.

[15]  S. Sawant,et al.  Impact of VLSI design rules on high voltage (2000 V) IGBTs/ESTs , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[16]  D. Alok,et al.  A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage , 1994, IEEE Electron Device Letters.

[17]  Bantval J. Baliga,et al.  SiC device edge termination using finite area argon implantation , 1997 .

[18]  Bantval J. Baliga,et al.  A study of EST's short-circuit SOA , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[19]  M.S. Shekar,et al.  A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance , 1991, IEEE Electron Device Letters.

[20]  B. J. Baliga,et al.  Silicon-carbide high-voltage (400 V) Schottky barrier diodes , 1992, IEEE Electron Device Letters.

[21]  Bantval J. Baliga,et al.  Controlling the characteristics of the MPS rectifier by variation of area of Schottky region , 1993 .

[22]  M. Tanaka,et al.  Tue low power dissipation Schottky barrier diode with trench structure , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[23]  B.J. Baliga,et al.  Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers , 1977, IEEE Transactions on Electron Devices.

[24]  M. Mehrotra,et al.  Very low forward drop JBS rectifiers fabricated using submicron technology , 1993 .

[25]  B. J. Baliga,et al.  Comparison of 6H-SiC, 3C-SiC, and Si for power devices , 1993 .

[26]  Tsutomu Yatsuo,et al.  Low leakage current Schottky barrier diode , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[27]  B.J. Baliga,et al.  The dual gate base resistance controlled thyristor , 1995, IEEE Electron Device Letters.

[28]  Bantval J. Baliga,et al.  Power semiconductor devices for variable-frequency drives , 1994, Proc. IEEE.

[29]  Steven T. Peake,et al.  Power semiconductor devices , 1995 .

[30]  Bantval J. Baliga,et al.  Comparison of 6H-SiC and 4H-SiC high voltage planar ACCUFETs , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[31]  Bantval J. Baliga,et al.  A low forward drop high voltage trench MOS barrier Schottky rectifier with linearly graded doping profile , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[32]  M.S. Adler,et al.  The insulated gate rectifier (IGR): A new power switching device , 1982, 1982 International Electron Devices Meeting.

[33]  A. Agarwal,et al.  1.1 kV 4H-SiC power UMOSFETs , 1997, IEEE Electron Device Letters.

[34]  Bantval J. Baliga,et al.  Comparison of ultralow specific on-resistance UMOSFET structures , 1992 .

[35]  N. Thapar,et al.  The accumulation channel driven bipolar transistor (ACBT) , 1997, IEEE Electron Device Letters.