Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
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M. N. Mizerov | A. V. Sakharov | W. V. Lundin | A. V. Sakharov | E. E. Zavarin | A. F. Tsatsulnikov | V. M. Ustinov | W. Lundin | V. Tikhomirov | E. Zavarin | V. V. Volkov | V. Zemlyakov | N. A. Cherkashin | M. N. Mizerov | A. F. Tsatsulnikov | V. G. Tikhomirov | V. E. Zemlyakov | V. V. Volkov | Ya. M. Parnes | V. N. Vyuginov | V. Vyuginov | N. Cherkashin | V. Ustinov | E. E. Zavarin | Ya. M. Parnes | V. N. Vyuginov | V. Volkov
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