Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells
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R. Würz | D. F. Marrón | A. Meeder | A. Rumberg | S. M. Babu | T. Schedel-Niedrig | U. Bloeck | P. Schubert-Bischoff | M. Lux‐Steiner
[1] J. Wilson,et al. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties , 1969 .
[2] S. Nishiwaki,et al. MoSe 2 layer formation at Cu(In,Ga)Se 2/Mo Interfaces in High Efficiency Cu(In1- xGa x)Se 2 Solar Cells , 1998 .
[3] A. Jäger-Waldau,et al. CVD of CuGaSe2 for thin film solar cells with various transport agents , 2001 .
[4] S. Nishiwaki,et al. Electrical properties of the Cu(In,Ga)Se2/ MoSe2/Mo structure , 2001 .
[5] A. Jäger-Waldau,et al. CVD of CuGaSe2 for thin film solar cells employing two binary sources , 2001 .