论文信息 - An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure

An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure

We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III–V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III–V channel materials.

[1] Hyunhyub Ko,et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors , 2010, Nature.

[2] F. Stern. Self-Consistent Results for n -Type Si Inversion Layers , 1972 .

[3] Subir Kumar Sarkar,et al. 3-D Analytical Modeling of Dual-Material Triple-Gate Silicon-on-Nothing MOSFET , 2017, IEEE Transactions on Electron Devices.

[4] D. Antoniadis,et al. Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS) , 2016, IEEE Transactions on Electron Devices.

[5] Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET , 2014, IEEE Transactions on Electron Devices.

[6] Jun-Sik Yoon,et al. Performance and Variations Induced by Single Interface Trap of Nanowire FETs at 7-nm Node , 2017, IEEE Transactions on Electron Devices.

[7] Mitsuru Takenaka,et al. Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability , 2013, IEEE Transactions on Electron Devices.

[8] A. Javey,et al. Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors , 2012, IEEE Electron Device Letters.