Gettering in silicon

A series of gettering experiments have been carried out for a better understanding of gettering mechanism(s) in silicon. We find that oxidation and oxynitridation, which are known to inject silicon interstitials, do not getter metallic impurities such as Au, Cu, Fe, and Ni while phosphorus (P) diffusion does produce effective gettering of these metals. We also find from P diffusion, Ar ion implantation, and Ni film gettering performed as a function of temperature, there exists an optimum gettering temperature. From a comprehensive discussion of the existing models, we conclude that neither the enhanced metal solubility nor the silicon interstitial model explains our experimental results. Furthermore, it is shown that generation of dislocations is not a prerequisite for effective gettering. A model, based on the segregation of impurities at high temperatures and on the release/diffusion of metallic impurities at lower temperatures, is proposed to explain all of our results. A general form of the segregatio...

[1]  R. Logan,et al.  Restoration of Resistivity and Lifetime in Heat Treated Germanium , 1955 .

[2]  W. Wilcox,et al.  Gold in Silicon: Effect on Resistivity and Diffusion in Heavily‐Doped Layers , 1964 .

[3]  K. Tu,et al.  Low temperature gettering of Cu, Ag, and Au across a wafer of Si by Al , 1982 .

[4]  K. Shenai,et al.  Analytical solutions for avalanche-breakdown voltages of single-diffused gaussian junctions☆ , 1983 .

[5]  T. Iizuka,et al.  Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers , 1980 .

[6]  H. Shiraki.  Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O2 Oxidation , 1975 .

[7]  J. Poate,et al.  Gettering rates of various fast‐diffusing metal impurities at ion‐damaged layers on silicon , 1972 .

[8]  R. Newman,et al.  Defects in silicon , 1982 .

[9]  R. Falster.  Platinum gettering in silicon by phosphorus , 1985 .

[10]  Alan F. Gibson,et al.  Progress in Semiconductors , 1958 .

[11]  S. Dannefaer.  Defects in semiconductors , 1989 .

[12]  T. Batchelder,et al.  Bake effects in positive photoresist , 1983 .

[13]  G. Cerofolini,et al.  Heavy Metal Gettering in Silicon‐Device Processing , 1980 .

[14]  T. Yeh,et al.  Impurity Gettering of Silicon Damage Generated by Ion Implantation Through SiO2 Layers , 1982 .

[15]  R. Fair.  Quantified Conditions for Emitter‐Misfit Dislocation Formation in Silicon , 1978 .

[16]  T. Seidel,et al.  Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in Si , 1975 .

[17]  P. Engel,et al.  Minority carrier lifetime improvement by HCl oxidation and argon ion implantation of silicon , 1983 .

[18]  D. Lecrosnier,et al.  Influence of phosphorus‐induced point defects on a gold‐gettering mechanism in silicon , 1980 .

[19]  M. Itsumi,et al.  Origin and elimination of defects in SiO2 thermally grown on Czochralski silicon substrate , 1982 .

[20]  P. Petroff,et al.  Elimination of Process‐Induced Stacking Faults by Preoxidation Gettering of Si Wafers II . Process , 1976 .

[21]  G. Cerofolini,et al.  Gettering mechanisms in silicon , 1988 .

[22]  J. Struthers.  Solubility and Diffusivity of Gold, Iron, and Copper in Silicon , 1956 .

[23]  Eicke R. Weber,et al.  Transition metals in silicon , 1983 .

[24]  E. Hearn,et al.  POCl3 and Boron Gettering of LSI Silicon Devices: Similarities and Differences , 1979 .

[25]  G. Schwuttke,et al.  Minority carrier lifetime improvement in silicon through laser damage gettering , 1980 .

[26]  James D. Plummer,et al.  A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion , 1987 .

[27]  Y. Hayafuji,et al.  Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized silicon , 1982 .

[28]  W. Schröter,et al.  Phosphorus gettering and intrinsic gettering of nickel in silicon , 1984 .

[29]  Robert W. Dutton,et al.  Supersaturation of self‐interstitials and undersaturation of vacancies during phosphorus diffusion in silicon , 1984 .

[30]  R. Dutton,et al.  Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon , 1985 .

[31]  G. Cerofolini,et al.  The role of dopant and segregation annealing in silicon p-n junction gettering , 1987 .

[32]  Y. Matsushita,et al.  A new intrinsic gettering technique using microdefects in Czochralski silicon crystal: A new double preannealing technique , 1980 .

[33]  U. Gösele,et al.  Interstitial supersaturation near phosphorus‐diffused emitter zones in silicon , 1979 .

[34]  J. E. Lawrence.  The Cooperative Diffusion Effect , 1966 .

[35]  Gary B. Bronner,et al.  Silicon interstitial generation by argon implantation , 1985 .

[36]  E. Mets.  Poisoning and Gettering Effects in Silicon Junctions , 1965 .

[37]  Gary B. Bronner,et al.  Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials , 1987 .

[38]  T. Seidel,et al.  Comparative study of annealed neon‐, argon‐, and krypton‐ion implantation damage in silicon , 1978 .

[39]  S. Hu.  Precipitation of oxygen in silicon: Some phenomena and a nucleation model , 1981 .

[40]  T. Hattori.  Gettering of stacking‐fault nuclei in silicon by trichloroethylene oxidation , 1977 .

[41]  C. S. Fuller,et al.  Chemical interactions among defects in germanium and silicon , 1956 .

[42]  G. Cerofolini,et al.  Gold solubility in silicon and gettering by phosphorus , 1978 .

[43]  C. Drum,et al.  Ion‐implantation‐damage gettering effect in silicon photodiode array camera target , 1973 .

[44]  S. Solmi,et al.  On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition , 1977 .

[45]  G. Rozgonyi,et al.  Extrinsic Gettering Via the Controlled Introduction of Misfit Dislocations , 1985 .

[46]  R. Dutton,et al.  Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon , 1983 .

[47]  H. Higuchi,et al.  Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si , 1983 .

[48]  Dimitri A. Antoniadis,et al.  Silicon self-interstitial supersaturation during phosphorus diffusion , 1983 .

[49]  J. Struthers,et al.  Gold in Silicon , 1958 .

[50]  T. Seidel,et al.  Enhanced solubility and ion pairing of Cu and Au in heavily doped silicon at high temperatures , 1975 .

[51]  M. C. Chen,et al.  Post‐Epitaxial Polysilicon and Si3 N 4 Gettering in Silicon , 1982 .

[52]  G. Schwuttke,et al.  Minority Carrier Lifetime in Annealed Silicon Crystals Containing Oxygen , 1978, November 16.

[53]  V. Zaleckas,et al.  A New Approach to Lattice Damage Gettering , 1979 .

[54]  S. M. Hu,et al.  Formation of stacking faults and enhanced diffusion in the oxidation of silicon , 1974 .

[55]  F. P. Heiman,et al.  Use of HCl Gettering in Silicon Device Processing , 1971 .

[56]  G. Rozgonyi,et al.  The Elimination of Stacking Faults by Preoxidation Gettering of Silicon Wafers III . Defect Etch Pit Correlation with p‐n Junction Leakage , 1976 .

[57]  Masakatsu Nakamura,et al.  A Study of Gettering Effect of Metallic Impurities in Silicon , 1968 .

[58]  P. S. D. Lin,et al.  Leakage and Breakdown in Thin Oxide Capacitors—Correlation with Decorated Stacking Faults , 1983 .

[59]  S. J. Silverman,et al.  Junction Delineation in Silicon by Gold Chemiplating , 1958 .

[60]  D. Pomerantz.  A Cause and Cure of Stacking Faults in Silicon Epitaxial Layers , 1967 .

[61]  M. Joshi,et al.  Distribution and Precipitation of Gold in Phosphorus‐Diffused Silicon , 1966 .

[62]  P. Griffin,et al.  Model for bulk effects on Si interstitial diffusivity in silicon , 1987 .

[63]  J. Lambert,et al.  The gettering of gold and copper from silicon , 1968 .

[64]  A. Goodman,et al.  A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors , 1961 .

[65]  V. A. Browne,et al.  Generation lifetime investigation of ion‐damage gettered silicon using MOS structure , 1976 .

[66]  A. G. Nassibian,et al.  Comparison of Ar‐, O‐, and Cl‐ion implant‐damage gettering of gold from silicon using metal oxide silicon techniques , 1982 .

[67]  B. Yun.  Improved oxide of metal‐oxide‐silicon capacitors resulting from backsurface argon implantation , 1981 .

[68]  G. Rozgonyi,et al.  Gated diode leakage and lifetime measurements of misfit dislocation gettered Si epitaxy , 1987 .

[69]  R. Jaccodine.  Precipitates Formed by High‐Concentration Phosphorus Diffusion in Silicon , 1968 .

[70]  S. Prussin,et al.  Generation and Distribution of Dislocations by Solute Diffusion , 1961 .

[71]  A. Rohatgi,et al.  Interaction of low‐energy implanted atomic H with slow and fast diffusing metallic impurities in Si , 1986 .