Ge nanostructures doped silica-on-silicon waveguides

Ge nanostructures embedded in silica matrix are emerging as a promising material for new generation devices due to the unique electric and photonic properties. In this paper, Ge nanoclusters and nanocylinders with Ge shell were successfully formed by the high energy electron irradiation in the PECVD deposited glass. In addition, large area Ge nanoclusters were also created by heat-treatment of PECVD deposited glass film. These nanostructures were characterized in terms of size, composition, distribution and crystalline state by using TEM, HRTEM, EDS, SEM, Raman spectroscopy, and SIMS. Waveguides doped with Ge nanoclusters were fabricated and their absorption has been characterized in a wavelength range from 500nm to 1700nm.

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