论文信息 - Characteristics of the metal insulator semiconductor structure:AlN/Si

Characteristics of the metal insulator semiconductor structure:AlN/Si

Single‐crystal AlN layers have been grown on Si substrates at ∼1200 °C using metalorganic chemical vapor deposition. The metal/AlN/Si MIS structures have been investigated by the MIS conductance method. It was found that the interface‐state density Nss and electron capture cross section σn in the depletion region are of the order of 1011 eV−1 cm−2 and 10−17 cm, respectively.

[1] E. H. Nicollian,et al. The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique , 1967 .

[2] H. M. Manasevit,et al. The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium , 1971 .

[3] H. Hasegawa,et al. An automatic C-V plotter , 1975 .

[4] J. Pankove,et al. Epitaxially grown AlN and its optical band gap , 1973 .

[5] C. C. Wang,et al. Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel , 1973 .

[6] D. Bolze,et al. Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour deposition , 1977 .

[7] D. Bolze,et al. Chemical and plasmachemical vapour deposition of aluminium nitride layers , 1976 .