论文信息 - Impact of back biasing on the effective mobility in UTBB FDSOI CMOS technology

Impact of back biasing on the effective mobility in UTBB FDSOI CMOS technology

In this work, the influence of back biasing on the effective mobility in Ultra Thin film and ultra thin Box Fully Depleted SOI devices is studied. The evolution of the carrier mobility with the effective field on large N & PMOS devices for thin (GO1) and thick gate oxide (GO2) is investigated. The impact of surface roughness scattering at high electric on the effective mobility is also demonstrated for both interfaces. Simple one dimensional semi-classic simulation shows that conventional local electric mobility degradation law well explains the obtained results

G. Ghibaudo | C. Fenouillet-Beranger | A. Cros | F. Balestra | I. Ben-Akkez

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