Dark current transport mechanism of p‐i‐n hydrogenated amorphous silicon diodes

The dark current‐voltage characteristics of p‐i‐n hydrogenated amorphous silicon diodes with various thicknesses of the intrinsic layer (i‐layer) (770–9300 A) are systematically investigated. The magnitude of the forward current is found to be independent of thickness of the i layer, which is obviously against the simple conventional junction theory. It has been demonstrated through various experiments that the forward current of amorphous p‐i‐n diodes is limited by a layer thinner than 770 A, possibly being the p/i interface or a narrow zone of the i layer.

[1]  Michael S. Shur,et al.  Theoretical modeling of amorphous silicon‐based alloy p‐i‐n solar cells , 1983 .

[2]  M. Lampert,et al.  Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma Case , 1961 .

[3]  H. Okushi,et al.  Metal‐semiconductor junctions and amorphous‐crystalline heterojunctions using B‐doped hydrogenated amorphous silicon , 1984 .

[4]  S. Yamasaki,et al.  Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H , 1983 .

[5]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[6]  R. Larrabee.  Current-Voltage Characteristics of Forward Biased Long p-i-n Structures , 1961 .

[7]  H. Okamoto,et al.  Mobility-lifetime product and interface property in amorphous silicon solar cells , 1983 .

[8]  R. Tayrani,et al.  Ultrafast GaAs microwave PIN diode , 1983 .

[9]  W. Spear,et al.  The characteristics of high current amorphous silicon diodes , 1980 .

[10]  R. N. Hall,et al.  Power Rectifiers and Transistors , 1952, Proceedings of the IRE.

[11]  H. Okamoto,et al.  Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method , 1983 .

[12]  A. S. Grove.  Physics and Technology of Semiconductor Devices , 1967 .

[13]  D. Carlson,et al.  AMORPHOUS SILICON SOLAR CELL , 1976 .

[14]  H. Okamoto,et al.  Characterization of mobility-lifetime products and interface property in amorphous silicon p-i-n junctions , 1983 .

[15]  Sanboh Lee,et al.  On the current‐voltage characteristics of amorphous hydrogenated silicon Schottky diodes , 1982 .

[16]  S. Ishihara,et al.  Interaction of hydrogenated amorphous silicon films with transparent conductive films , 1983 .

[17]  W. Schottky,et al.  Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter , 1939 .

[18]  High-voltage conductivity-modulated silicon rectifier , 1957 .

[19]  M. Hirose,et al.  Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes , 1981 .

[20]  Hideyo Okushi,et al.  Electrical properties of n-amorphous/p-crystalline silicon heterojunctions , 1984 .

[21]  N. Mott.  The Theory of Crystal Rectifiers , 1939 .

[22]  R. Street.  Transient photoconductivity studies of the light soaked state of hydrogenated amorphous silicon , 1983 .

[23]  R. E. Daniel,et al.  Schottky‐barrier characteristics of metal–amorphous‐silicon diodes , 1976 .