A Mathematical Model of the Fluid Mechanics and Gas‐Phase Chemistry in a Rotating Disk Chemical Vapor Deposition Reactor

We describe a mathematical model of the coupled fluid mechanics and gas-phase chemical kinetics in a rotating-disk chemical vapor deposition reactor. The analysis uses a similarity transformation that reduces the problem to a one-dimensional boundary value problem. The deposition of silicon from silane is used as an example system. We present predictions of deposition rate as a function of susceptor temperature, spin rate, and carrier gas. 12 refs.