On-chip SiGe transmission line measurements and model verification up to 110 GHz
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[1] J. P. Mondal,et al. Propagation constant determination in microwave fixture de-embedding procedure , 1988 .
[2] Keith Jones,et al. LRM and LRRM Calibrations with Automatic Determination of Load Inductance , 1990, 36th ARFTG Conference Digest.
[3] J.A.M. Geelen,et al. An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
[4] D.F. Williams,et al. Characteristic impedance determination using propagation constant measurement , 1991, IEEE Microwave and Guided Wave Letters.
[5] W. R. Eisenstadt,et al. S-parameter-based IC interconnect transmission line characterization , 1992 .
[6] Jiming Song,et al. A de-embedding technique for interconnects , 2001, IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565).
[7] S. Jeng,et al. Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology , 2002, IEEE Electron Device Letters.
[8] Israel A. Wagner,et al. On-chip interconnect-aware design and modeling methodology based on high bandwidth transmission line devices , 2003, Proceedings 2003. Design Automation Conference (IEEE Cat. No.03CH37451).
[9] M. Meghelli. A 108Gb/s 4:1 multiplexer in 0.13/spl mu/m SiGe-bipolar technology , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).
[10] T. Zwick,et al. A new on-wafer de-embedding technique for on-chip rf transmission line interconnect characterization , 2004, ARFTG 63rd Conference, Spring 2004.
[11] B. Floyd,et al. 60GHz transceiver circuits in SiGe bipolar technology , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).
[12] M. Meghelli. A 132Gb/s 4:1 multiplexer in 0.13/spl mu/m SiGe-bipolar technology , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..