Band Offsets Between Amorphous LaAlO3 And In0.53Ga0.47As
暂无分享,去创建一个
Yun Sun | P. Pianetta | W. Tsai | N. Goel | C. K. Gaspe | E. Garfunkel | D. Schlom | M. Santos | Michael B. Santos | T. Gustafsson | J. Keay | C. M. Garner | M. Warusawithana | H. Wen | L. Goncharova
[1] Y. Nishi,et al. High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric , 2007 .
[2] J. Schubert,et al. Optical properties of La-based high-K dielectric films , 2005 .
[3] M. J. Kim,et al. Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001) , 2005 .
[4] M. Gutowski,et al. Experimental determination of valence band maxima for SrTiO3, TiO2, and SrO and the associated valence band offsets with Si(001) , 2004 .
[5] B. Holländer,et al. Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon , 2004 .
[6] B. Holländer,et al. Measurement of the band offsets between amorphous LaAlO3 and silicon , 2004 .
[7] R. Pease,et al. Optimization and characterization of III–V surface cleaning , 2003 .
[8] John Robertson,et al. Band offsets and Schottky barrier heights of high dielectric constant oxides , 2002 .
[9] T. Jackson,et al. Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry , 2002 .
[10] Seiichi Miyazaki,et al. Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics , 2001 .
[11] E. Garfunkel,et al. Limitations to depth resolution in ion scattering experiments , 2001 .
[12] R. Droopad,et al. Band offset and structure of SrTiO3 /Si(001) heterojunctions , 2001 .
[13] R. Droopad,et al. Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions , 2000 .
[14] J. Robertson. Band offsets of wide-band-gap oxides and implications for future electronic devices , 2000 .
[15] Mark C. Reuter,et al. A new two-dimensional particle detector for a toroidal electrostatic analyzer , 1991 .
[16] E. A. Kraut,et al. Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy , 1983 .
[17] S. P. Kowalczyk,et al. Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transfer , 1981 .
[18] E. A. Kraut,et al. Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials , 1980 .
[19] Todd S. Kaplan,et al. IEEE Compound Semiconductor Integrated Circuit Symposium , 2006 .