论文信息 - Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics - 字舞流文

Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

Daehyun Kim | H. Sugiyama | H. Matsuzaki | Tae-Woo Kim | Hyeon-Bhin Jo | J. Baek | T. Tsutsumi | I. Lee | Jun-Gyu Kim | Seung-Won Yun | Sang-Kuk Kim | J. Yun | T.E. Kim