Selective area growth of Ga‐polar GaN nanowire arrays by continuous‐flow MOVPE: A systematic study on the effect of growth conditions on the array properties

Site-controlled growth of GaN nanowires (NWs) on GaN-on-sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous-flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga-polar substrates. The lateral growth rate, that is, perpendicular to the c-axis, could be further controlled using appropriate growth temperatures and H2/N2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.

[1]  George T. Wang,et al.  Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition , 2006 .

[2]  Kwan Soo Chung,et al.  Nanoscale Ultraviolet‐Light‐Emitting Diodes Using Wide‐Bandgap Gallium Nitride Nanorods , 2003 .

[3]  Y. Kiang,et al.  Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays , 2013 .

[4]  Michael N. Fairchild,et al.  GaN nanowire light emitting diodes based on templated and scalable nanowire growth , 2009 .

[5]  K. Kishino,et al.  InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate , 2004 .

[6]  Martin Strassburg,et al.  Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods , 2011 .

[7]  X. J. Chen,et al.  Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy , 2011 .

[8]  J. Ristić,et al.  Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy , 2006 .

[9]  A. Waag,et al.  N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties , 2011 .

[10]  Xiangfeng Duan,et al.  Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires , 2000 .

[11]  P. Daniel Dapkus,et al.  Catalyst‐Free GaN Nanorods Synthesized by Selective Area Growth , 2014 .

[12]  M. Jublot,et al.  Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties , 2014 .

[13]  A. Waag,et al.  Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures , 2013 .

[14]  H. Amano,et al.  Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique , 2014 .

[15]  A. Waag,et al.  Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells , 2010, Nanotechnology.

[16]  A. Di Carlo,et al.  Strain evolution in GaN nanowires: From free-surface objects to coalesced templates , 2013, 1305.7115.

[17]  Y. Arakawa,et al.  Selective-area growth of thin GaN nanowires by MOCVD , 2012 .

[18]  S. Hersee,et al.  The controlled growth of GaN nanowires. , 2006, Nano letters.

[19]  James S. Speck,et al.  Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 , 1996 .

[20]  Charles M. Lieber,et al.  Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes. , 2005, Nano letters.

[21]  Silke Christiansen,et al.  Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire , 2014 .

[22]  S. Aloni,et al.  Complete composition tunability of InGaN nanowires using a combinatorial approach. , 2007, Nature materials.

[23]  Charles M. Lieber,et al.  GaN nanowire lasers with low lasing thresholds , 2005 .

[24]  B. Daudin,et al.  From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer , 2007 .

[25]  A. Waag,et al.  The nanorod approach: GaN NanoLEDs for solid state lighting , 2011 .

[26]  H. Renevier,et al.  Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy , 2009, Nanotechnology.

[27]  Ji-Hyeon Park,et al.  Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes. , 2013, Nano letters.

[28]  S. Reitzenstein,et al.  Direct comparison of catalyst-free and catalyst-induced GaN nanowires , 2010 .

[29]  A. Waag,et al.  GaN based nanorods for solid state lighting , 2012 .

[30]  Christophe Durand,et al.  Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate , 2011 .

[31]  Kelly P. Knutsen,et al.  Single gallium nitride nanowire lasers , 2002, Nature materials.

[32]  Yong Ding,et al.  Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. , 2008, Nature materials.

[33]  J. Eymery,et al.  Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy , 2010, Nanotechnology.

[34]  Chia-Chun Chen,et al.  Large‐Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires , 2000 .

[35]  D. Kim,et al.  High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays , 2004 .