Field dependent charge trapping effects in SIMOX and buried oxides at very high dose

SIMOX (separation by implantation of oxygen) devices have been irradiated at up to 100 Mrad under different positive and negative back-gate voltages. At low cumulated dose, hole trapping is controlled by external applied field. For higher doses up to 100 Mrad, the early positive net charge is compensated mainly by electron trapping. Nevertheless, at weak fields, no evidence of positive charge compensation is observed. Interface state buildup appears at very high dose (>10 Mrad) for the set of biases used, but influences slightly V/sub tb/ shift. The trapped hole recombination effect also occurs, but seems significant only for negative biases in the numerical approach. Furthermore, annealing data reveal a complex structure of traps that requires further investigations. >

[1]  Harold L. Hughes,et al.  Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements , 1972 .

[2]  P. Winokur,et al.  Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .

[3]  Activation Energies of Thermal Annealing of Radiation-Induced Damage in n- and p-channels of CMOS Integrated Circuits, Part II , 1980, IEEE Transactions on Nuclear Science.

[4]  Eric Delagnes,et al.  High total dose effects on CMOS/SOI technology , 1991 .

[5]  Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices , 1987, IEEE Transactions on Nuclear Science.

[6]  J. F. Conley,et al.  Electron spin resonance study of E' trapping centers in SIMOX buried oxides , 1991 .

[7]  D. C. Mayer.  Modes of operation and radiation sensitivity of ultrathin SOI transistors , 1990 .

[8]  Federico Faccio,et al.  Study of device parameters for analog IC design in a 1.2 mu m CMOS-SOI technology after 10 Mrad (for hadron colliders) , 1992 .

[9]  S. Cristoloveanu,et al.  Electron trapping in irradiated SIMOX buried oxides , 1991, IEEE Electron Device Letters.

[10]  T. L. Taylor,et al.  Charge buildup at high dose and low fields in SIMOX buried oxides , 1991 .

[11]  J. Leray,et al.  Comparative study of radiation‐induced electrical and spin active defects in buried SiO2 layers , 1992 .

[12]  T. P. Ma,et al.  Ionizing radiation effects in MOS devices and circuits , 1989 .

[13]  G. Dunn,et al.  Hole transport in SiO/sub 2/ and reoxidized nitrided SiO/sub 2/ gate insulators at low temperature (FETs) , 1991 .

[14]  A. Umbert,et al.  From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena , 1988 .

[15]  Der‐Sun Lee,et al.  Oxide charge accumulation in metal oxide semiconductor devices during irradiation , 1991 .

[16]  H. L. Hughes,et al.  Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator , 1986, IEEE Transactions on Nuclear Science.

[17]  B. Giffard,et al.  CMOS/SOI hardening at 100 Mrad (SiO/sub 2/) , 1990 .

[18]  T. R. Oldham,et al.  Response of interface traps during high-temperature anneals (MOSFETs) , 1991 .