Robust Co alloy design for Co interconnects using a self-forming barrier layer

[1]  R. Dahlstrom,et al.  Challenges and opportunities , 2021, Foundations of a Sustainable Economy.

[2]  D. Gall,et al.  Narrow interconnects: The most conductive metals , 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

[3]  Christopher J. Wilson,et al.  Dielectric Reliability Study of 21 nm Pitch Interconnects with Barrierless Ru Fill , 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

[4]  S. Pae,et al.  Amorphous TaxMnyOz Layer as a Diffusion Barrier for Advanced Copper Interconnects , 2019, Scientific Reports.

[5]  T. Standaert,et al.  Exploring the Limits of Cobalt Liner Thickness in Advanced Copper Interconnects , 2019, IEEE Electron Device Letters.

[6]  H. Nishikawa,et al.  Effect of FeCoNiCrCu0.5 High-entropy-alloy Substrate on Sn Grain Size in Sn-3.0Ag-0.5Cu Solder , 2019, Scientific Reports.

[7]  R. G. Southwick,et al.  Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch , 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

[8]  A. Pelton.  Phase Diagrams and Thermodynamic Modeling of Solutions , 2019 .

[9]  K. Croes,et al.  Interconnect metals beyond copper: reliability challenges and opportunities , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

[10]  Z. Tokei,et al.  Testing The Limits of TaN Barrier Scaling , 2018, 2018 IEEE International Interconnect Technology Conference (IITC).

[11]  K. Rosso,et al.  A First Principles Investigation of Native Interstitial Diffusion in Cr2O3 , 2018, 1805.03775.

[12]  Daniel C. Edelstein,et al.  20 Years of Cu BEOL in manufacturing, and its future prospects , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[13]  M. Short,et al.  Anisotropic ion diffusion in α-Cr2O3: an atomistic simulation study. , 2017, Physical chemistry chemical physics : PCCP.

[14]  Mehul Naik,et al.  Cobalt fill for advanced interconnects , 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

[15]  E. T. Ryan,et al.  Cobalt interconnect on same copper barrier process integration at the 7nm node , 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

[16]  Ruth Brain,et al.  Interconnect scaling: Challenges and opportunities , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[17]  Wei Wang,et al.  Ruthenium interconnect resistivity and reliability at 48 nm pitch , 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

[18]  Y. Sutou,et al.  Diffusion barrier property of MnSixOy layer formed by chemical vapor deposition for Cu advanced interconnect application , 2015 .

[19]  F. Chiu.  A Review on Conduction Mechanisms in Dielectric Films , 2014 .

[20]  K. Su,et al.  Correlation Between TDDB and VRDB for Low- $k$ Dielectrics With Square Root $E$ Model , 2010 .

[21]  F. Zahid,et al.  Resistivity of thin Cu films with surface roughness , 2009 .

[22]  Tetsuya Osaka,et al.  Advanced nanoscale ULSI interconnects : fundamentals and applications , 2009 .

[23]  Young‐Chang Joo,et al.  Characteristics of leakage current in the dielectric layer due to Cu migration during bias temperature stress , 2008 .

[24]  Tapan Gupta,et al.  Copper Interconnect Technology , 2008 .

[25]  T. Suzuki,et al.  Further Enhancement of Electro-migration Resistance by Combination of Self-aligned Barrier and Copper Wiring Encapsulation Techniques for 32-nm Nodes and Beyond , 2008, 2008 International Interconnect Technology Conference.

[26]  Junichi Koike,et al.  Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn∕SiO2 interface , 2007 .

[27]  J. Koike,et al.  Growth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C , 2007 .

[28]  M. Wada,et al.  Cu Alloy Metallization for Self-Forming Barrier Process , 2006, 2006 International Interconnect Technology Conference.

[29]  Junichi Koike,et al.  Self-forming diffusion barrier layer in Cu–Mn alloy metallization , 2005 .

[30]  W. Steinhögl,et al.  Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller , 2005 .

[31]  T. Kuan,et al.  Alteration of Cu conductivity in the size effect regime , 2004 .

[32]  C. Yoon,et al.  Interdiffusion in antiferromagnetic/ferromagnetic exchange coupled NiFe/IrMn/CoFe multilayer , 2002 .