Comparison and analysis on measurement of optical parameters of some semiconductor films by two methods

The optical parameters of GeTe and Ge2Sb2Te5 semiconductor films by thermal treatment have been measured carefully by using a new method. A compared study by means of using a spectrum ellipsometer is presented. The optical parameters of the sample films are precisely obtained through the processes of data simulation and correction of the old calculation model. In the meantime, the data calculations of the same samples measured by a spectrum ellipsometer are given, and the complex refractive index curves of them in the spectrum range from 250 nm to 830 nm are obtained.