Detection of sub-Terahertz and Terahertz radiation by plasma waves in silicon field effect transistors

We report on the first experiments on detection of the sub-THz and THz (120 GHz and 3 THz) radiation using Si FETs with nanometer and submicron gate lengths at 300 K. The observed photo-response is in agreement with the predictions of the Dyakonov-Shur theory. The plasma wave parameters deduced from the experiments allow us to predict the non resonant and resonant detection in the THz range by nanometer size silicon devices.

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