论文信息 - CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers

CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers

An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×108 cmHz1/2 W-1.

Chengkuo Lee | Huchuan Zhou | P. Kropelnicki | J. M. Tsai

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