Dielectrics in SI nano-devices: Roles and challenges

Si CMOS transistors are nano-devices based on the fact that the production transistor Lgate is in deep sub-100nm regime and research transistor Lgate in sub-10nm. Dielectrics have played and will continue to play important roles in scaling of Si nano-devices. New high-k gate dielectrics are desperately needed to control the gate leakage. Dielectrics are also important for minimizing parasitic capacitance, reducing channel leakage, controlling short channel effects, and inducing strain in the channel for performance boost. Challenges surround the introduction of a host of new materials and device architectures.