论文信息 - Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures

Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures

Laterally coupled, complex distributed feedback lasers based on AlInGaAs/InAs/InP quantum dash layers were fabricated by maskless focused ion beam lithography. Continuous-wave powers above 30 mW at room temperature, sidemode suppression ratios of 44 dB and a modulation bandwidth of 7.6 GHz were demonstrated.

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