Nucleation and growth of tin whiskers

Pure tin film of one micron thick was evaporated onto a silicon substrate with chromium and nickel underlayers. The tinned silicon disk was bent by applying a dead load at the center and supported below around the edge to apply biaxial compressive stresses to the tin layer. After 180 C vacuum annealing for 1,2,4,6, and 8 weeks, tin whiskers/hillocks grew. A quantitative method revealed that the overall growth rate decreased with time with a tendency for saturation. A review of the literature showed in general, tin whisker growth has a nucleation period, a growth period and a period of saturation, very similar to recrystallization or phase transformation. In fact we found our data fit Avrami equation very well. This equation shows that the nucleation period was the first week.

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