Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications

In this letter, we demonstrate a self-limited conductive-bridging random access memory (CBRAM) that removes the necessity for external current compliance in a one selector–one resistor (1S1R) architecture. The standard Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) is used as a CBRAM switching layer. In addition, Te-rich GST is also considered. Their performance is then compared. Both samples exhibit self-limited on-current characteristics, and the on-currents of the standard GST and Te-rich GST are ~300 and <inline-formula> <tex-math notation="LaTeX">$\sim 20~\mu \text{A}$ </tex-math></inline-formula>, respectively. The observed self-limited characteristics are caused by the Te in the GST layer because in the presence of Te, Cu tends to form a more stable CuTe phase that restrict Cu filament growth. Furthermore, to confirm the feasibility of crossbar array applications, the 1S1R device is evaluated using a Ag/TiO<sub>2</sub>-based threshold selector device reported in our previous work. Hence, we confirm leakage current reduction, a uniform resistance distribution, and stable retention characteristics in the 1S1R configuration with no external current compliance.

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