论文信息 - Noise behavior of GaAs field-effect transistors with short gate lengths

Noise behavior of GaAs field-effect transistors with short gate lengths

The noise behavior of the GaAs Schottky-barrier gate field-effect transistor has been investigated theoretically and experimentally. It has been found that an additional noise source has to be taken into account in GaAs FET's biased in the pinchoff region: the intervalley scattering noise. This noise source has been investigated and a new transistor noise model is proposed. Measured and calculated noise figures show good agreement in the frequency range 2-10 GHz. It is shown that the influence of the intervalley scattering noise can be reduced by reducing the channel thickness, and that such devices show excellent gain and noise properties in the X band.

W. Baechtold | W. Baechtold

[1] W. Baechtold,et al. Noise in Microwave Transistors , 1968 .

[2] W. Walter,et al. High-speed gallium-arsenide Schottky-barrier field-effect transistors , 1970 .

[3] H. Rees. Time response of the high-field electron distribution function in GaAs , 1969 .

[4] A. van der Ziel,et al. Thermal Noise in Field-Effect Transistors , 1962 .

[5] P. N. Butcher,et al. The Gunn effect , 1967 .

[6] R. Sommerhalder,et al. Dynamic performance of Schottky-barrier field-effect transistors , 1970 .

[7] A. Ziel. Gate noise in field effect transistors at moderately high frequencies , 1963 .

[8] W. Baechtold,et al. Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies , 1971 .

[9] W. Baechtold,et al. Noise temperature in silicon in the hot electron region , 1971 .

[10] P. Wolf,et al. Microwave properties of Schottky-barrier field-effect transistors , 1970 .