Charge Instabilities in Lateral Super‐Lattices under Conditions of Population Inversion

Lateral super-lattices along the surface of a semiconductor can generate mini-band structure for distances of the order of 1000 A or less. The detailed gap structure depends noticeably on the charge in the structure. Under conditions of strong population inversion, synergetic switching behavior and space-charge waves can be expected to occur. Ein laterales Ubergitter an der Oberflache eines Halbleiters kann eine Mini-Bandstruktur fur Abstande der Grosenordnung 1000 A oder kleiner erzeugen. Die genaue Gap-Struktur hangt wesentlich von der Ladung in der Struktur ab. Unter Bedingungen der strengen Besetzungsumkehr kann das Auftreten eines synergetischen Schaltverhaltens und von Raumladungswellen erwartet werden.

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