Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer

Room-temperature continuous-wave (CW) operation at the ground state has been achieved in self-formed quantum-dot lasers with multistacked dot layer. By systematic investigation, discontinuous shifts of lasing wavelength from the high-order subbands to the ground state are clearly demonstrated for the first time by varying the number of dot layers and the cavity loss. Lasers oscillating at different subbands exhibit different behaviors against temperature both in the spectral characteristics and in the threshold currents, which are strongly related to emission efficiency of quantum dots and thermal excitation of carriers to higher order subbands. High characteristic temperature over 300 K has been achieved in a laser with high-reflection coating on both facets in the temperature range 60-200 K. Future prospects of improvement in the laser characteristics are also discussed.

[1]  M. Asada,et al.  Gain and the threshold of three-dimensional quantum-box lasers , 1986 .

[2]  Harris,et al.  Vertically aligned and electronically coupled growth induced InAs islands in GaAs. , 1996, Physical review letters.

[3]  Nikolai N. Ledentsov,et al.  InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties , 1996 .

[4]  Jamie D. Phillips,et al.  Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers , 1996 .

[5]  H. Kamada,et al.  Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self‐organized on GaAs (311)B substrates , 1994 .

[6]  H. Ishikawa,et al.  Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection , 1995, IEEE Photonics Technology Letters.

[7]  S. Muto,et al.  Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy , 1995 .

[8]  Mikhail V. Maximov,et al.  Formation of coherent superdots using metal‐organic chemical vapor deposition , 1996 .

[9]  Mitsuru Sugawara,et al.  Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique , 1996 .

[10]  Hajime Shoji,et al.  Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck , 1996 .

[11]  Egorov,et al.  Ultranarrow Luminescence Lines from Single Quantum Dots. , 1995, Physical review letters.

[12]  Mikhail V. Maximov,et al.  Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .

[13]  Yoshiaki Nakata,et al.  Near- 1.3-µm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots , 1995 .

[14]  H. Sakaki,et al.  Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[15]  John E. Bowers,et al.  1.3 μm photoluminescence from InGaAs quantum dots on GaAs , 1995 .

[16]  Yoshiaki Nakata,et al.  Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy , 1997 .

[17]  S. Denbaars,et al.  Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .

[18]  M. Sugawara,et al.  Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm , 1994 .

[19]  Nikolai N. Ledentsov,et al.  Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment , 1996 .

[20]  Nikolai N. Ledentsov,et al.  Prevention of gain saturation by multi-layer quantum dot lasers , 1996 .

[21]  Hiroshi Ishikawa,et al.  Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer , 1996 .

[22]  Hiroshi Ishikawa,et al.  Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer , 1996 .

[23]  Y. Arakawa,et al.  Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition , 1994 .