A 77 GHz power amplifier using transformer-based power combiner in 90 nm CMOS

A 77 GHz fully-integrated power amplifier (PA) with 50 Ω input and output matching has been realized in a general purpose 90 nm CMOS technology. In order to improve the output power and reduce the signal loss, a transformer and a short stub topology are employed respectively. The power amplifier achieves a saturated output power (Pout,sat) of +13.2 dBm and 1dB compressed output power (Pout,1dB) of +11.2 dBm with a peak power-added efficiency (PAE) of 10.4% while operated with a 1.2 V supply.

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