An analytical model for the inverse narrow‐gate effect of a metal‐oxide‐semiconductor field‐effect transistor

A closed‐form analytical expression is derived to predict the threshold voltage of a narrow‐gate metal‐oxide‐semiconductor field‐effect transistor with a fully recessed field‐isolation structure. The calculation is based on a simple conformal transform and a physical model employing the depletion approximation. The physical origin of the inverse narrow‐gate effect is mentioned. Threshold‐voltage variations under the influence of various physical parameters are discussed, and a comparison with published data shows that the present model is useful.