Gate oxides on 4H-SiC substrates grown or annealed in N/sub 2/O/Ar mixture

N/sub 2/O directly grown gate oxides on 4H-SiC have been characterized using MOS capacitors, under several diluted N/sub 2/O/Ar furnace conditions. The effect of N/sub 2/O annealings on standard thermal dry O/sub 2/ gate oxides has also been analysed comparing the channel mobility of 4H-SiC MOSFETs. The measured 4H-SiC MOSFET transfer characteristics are fitted using a 2D device simulator (MEDICI), taking into account the effect of the interfacial traps density within the band-gap.

[1]  S. Dimitrijev,et al.  Effects of nitridation in gate oxides grown on 4H-SiC , 2001 .

[2]  P. Friedrichs,et al.  Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype , 1999, IEEE Electron Device Letters.

[3]  Sima Dimitrijev,et al.  Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC , 2001 .

[4]  P. Lai,et al.  Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H–SiC , 2003 .

[5]  H. B. Harrison,et al.  INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL PROCESSING , 1997 .

[6]  R. Gutmann,et al.  Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2 , 2004 .

[7]  H. Matsunami,et al.  High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient , 2004 .

[8]  S. Dimitrijev,et al.  Channel-carrier mobility parameters for 4H SiC MOSFETs , 2002, 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).

[9]  T. Chow,et al.  Thermal Oxidation of SiC in N 2 O , 1994 .

[10]  H. B. Harrison,et al.  Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O , 2003 .

[11]  P. T. Lai,et al.  Interface properties of N2O-annealed SiC metal oxide semiconductor devices , 2001 .

[12]  H. Mitlehner,et al.  SiC devices: physics and numerical simulation , 1994 .

[13]  H. Ólafsson,et al.  Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O) , 2004 .

[14]  Andre Stesmans,et al.  Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation , 2003 .